ONSEMI – POWER TRENCH MOSFET 100V 4.4A 60 OHM N Channel – FDM3622

ONSEMI – POWER TRENCH MOSFET 100V 4.4A 60 OHM N Channel – FDM3622

The ONSEMI – POWER TRENCH MOSFET 100V 4.4A 60 OHM N Channel – FDM3622 is a high-performance N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 4.4A. It features a low drain-source resistance of 44 mOhms, making it suitable for various power applications. The MOSFET has a gate-source voltage range of -20V to +20V and a gate-source threshold voltage of 2V. With a gate charge of 17nC, it offers fast switching performance with a fall time of 26ns and a rise time of 25ns. The MOSFET is designed for enhancement mode operation and is part of the UltraFET series from onsemi/Fairchild. It comes in a compact Power-33-8 package and can be mounted using SMD/SMT technology. The MOSFET is available in different packaging options including reel, cut tape, and MouseReel. It has a low profile with a height of 0.8mm and a length of 3.3mm. With a power dissipation of 2.1W, it can operate in a wide temperature range from -55°C to +150°C. This MOSFET is a reliable and efficient solution for various electronic applications.