Description

The Microchip JAN2N2905A is a high-performance PNP bipolar junction transistor (BJT) designed for demanding applications. Encased in a TO-39-3 package, this transistor is suited for through-hole mounting, ensuring durability and robust connectivity.

Key features include:

• Collector-Emitter Voltage (VCEO Max): 60V
• Collector-Emitter Saturation Voltage: 400mV
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 5V
• Transistor Polarity: PNP
• Configuration: Single
• DC Collector/Base Gain (hFE Min): 50
• DC Current Gain (hFE Max): 450mA
• Power Dissipation (Pd): 800mW
• Operating Temperature Range: -65°C to +200°C
• Continuous Collector Current: -600mA

The JAN2N2905A is engineered for high reliability and efficiency, capable of handling extreme temperatures from -65°C to +200°C. Its 800mW power dissipation ensures optimal performance in power-intensive applications, while the 400mV collector-emitter saturation voltage allows for low power loss and high efficiency.

With a DC current gain ranging from 50 to 450mA, this transistor is perfect for amplification and switching applications. Manufactured by onsemi, a reputable brand in the semiconductor industry, the JAN2N2905A is a versatile component suitable for various electronic circuits.

Designed for global use by Miken Electronics, the Microchip JAN2N2905A PNP bipolar transistor is a reliable choice for ensuring the integrity and performance of your electronic systems.