Description

The STM – MESH OVERLAY™ N-Channel MOSFET (ST-N1N20) is a high-performance semiconductor device designed using the latest high-voltage MESH OVERLAY™ process. This advanced N-channel Power MOSFET features a low on-resistance of 1.2 Ohm and can handle up to 1A of current at 200V. The innovative STrip layout, combined with a proprietary edge termination structure, ensures superior performance and reliability, making it an ideal choice for converters in lighting applications. Packaged in a compact SOT-223 form factor, the ST-N1N20 offers efficient power management solutions. Available globally through Miken Electronics, this MOSFET provides cutting-edge technology for demanding electronic applications.